Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Bipolar transistorDescription: STMICROELECTRONICS 2ST2121 Single transistor bipolar, PNP, -250 V, 25 MHz, 250 W, -17 A, 80 hFE60065+$14.139550+$13.5352200+$13.1968500+$13.11221000+$13.02762500+$12.93105000+$12.87057500+$12.8101 -
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Category: MOSpipeDescription: RF MOSFET transistor 150W-50V MoistResist HF/VHF DMOS TRANSIST16811+$631.526910+$609.368150+$606.5982100+$603.8284150+$599.3966250+$595.5188500+$591.64101000+$587.2093 -
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Category: Power diodeDescription: Guangying electric rectifier SILICON POWER RECTIFIER48951+$235.839710+$229.687450+$224.9706100+$223.3299200+$222.0995500+$220.45891000+$219.43352000+$218.4081 -
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Category: Power diodeDescription: Guangying Silicon Power Rectifier86611+$112.320510+$107.4370100+$106.5580250+$105.8743500+$104.79991000+$104.31162500+$103.62795000+$103.0419 -
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Category: Power diodeDescription: Guangying Silicon Power Rectifier55001+$176.085710+$171.492250+$167.9704100+$166.7455200+$165.8268500+$164.60191000+$163.83632000+$163.0707 -
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Category: Schottky diodeDescription: DD Series, Infineon * * Infineon * * PowerBLOCK dual diode (* * DD series * *) rectifier diode module has the following configuration: fast diode and rectifier diode. The range of the pressure contact technology rectifier diode module is 20mm to 60mm, with a voltage range of up to 1800V and a maximum current of 600A. The PowerBLOCK rectifier diode has an electrically insulated base that includes an isolated copper substrate. They can be used for power controllers, soft starters, and drive applications. The PowerBLOCK casing is easy to install with pressure contact technology for fault protection/short circuit in case of faults - preventing arcing in case of faults # # # diodes and rectifiers, Infineon25021+$514.884910+$501.453150+$491.1554100+$487.5736200+$484.8873500+$481.30551000+$479.06682000+$476.8282 -
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Category: Power diodeDescription: Guangying Silicon Power Rectifier76171+$140.288510+$136.628850+$133.8230100+$132.8471200+$132.1152500+$131.13931000+$130.52932000+$129.9194 -
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Category: Power diodeDescription: Guangying Silicon Power Rectifier12121+$363.807110+$354.316550+$347.0403100+$344.5095200+$342.6114500+$340.08061000+$338.49882000+$336.9170 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 105V 3Pin H-36265-2 Tray61971+$525.685710+$511.972250+$501.4584100+$497.8015200+$495.0588500+$491.40191000+$489.11632000+$486.8307 -
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Category: IGBTtransistorDescription: IGBTTube/Module FP15R12KE3G-25861+$442.372810+$430.832650+$421.9852100+$418.9078200+$416.5998500+$413.52241000+$411.59902000+$409.6757 -
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Category: Bipolar transistorDescription: TO-5 PNP 200V 1A77451+$3226.767510+$3197.433325+$3182.766150+$3168.0990100+$3153.4319150+$3138.7648250+$3124.0976500+$3109.4305 -
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Category: Bipolar transistorDescription: Trans RF BJT NPN 20V 21A 3Pin(3+Tab) SOT-439A Bulk11451+$746.843610+$720.638650+$717.3630100+$714.0873150+$708.8463250+$704.2605500+$699.67461000+$694.4336 -
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Category: Bipolar transistorDescription: RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V87501+$581.259810+$560.864750+$558.3153100+$555.7659150+$551.6869250+$548.1178500+$544.54861000+$540.4696 -
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Category: Bipolar transistorDescription: AClass AB microwave power type silicon NPN transistor 0.7 W, 960 to 1215 MHz, 18 V Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V11431+$417.485710+$406.594750+$398.2450100+$395.3408200+$393.1626500+$390.25831000+$388.44322000+$386.6280 -
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Category: Bipolar transistorDescription: Microwave power transistor NPN silicon MICROWAVE POWER TRANSISTOR NPN Silicone70441+$1760.983410+$1744.974525+$1736.970050+$1728.9655100+$1720.9611150+$1712.9566250+$1704.9521500+$1696.9476 -
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Category: Bipolar transistorDescription: Microwave power transistor NPN silicon MICROWAVE POWER TRANSISTORS NPN Silicone19561+$1197.644810+$1186.757125+$1181.313350+$1175.8694100+$1170.4256150+$1164.9818250+$1159.5379500+$1154.0941 -
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Category: MOSpipeDescription: N Channel power MOSFET, IXYS CoolMOS ™ ### MOSFET transistors, a series of advanced discrete power MOSFET devices from IXYS89991+$257.935810+$251.207050+$246.0483100+$244.2540200+$242.9082500+$241.11391000+$239.99242000+$238.8710 -
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Category: Bipolar transistorDescription: ON SEMICONDUCTOR MJ15022G Single transistor bipolar, audio, NPN, 200 V, 4 MHz, 250 W, 16 A, 60 hFE51101+$41.815510+$39.4163100+$37.6340250+$37.3598500+$37.08561000+$36.77712500+$36.50295000+$36.3315 -
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Category: Bipolar transistorDescription: High? Is the current complementary silicon power transistor high? Current Complementary Silicon Power Transistors3043 -
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Category: Bipolar transistorDescription: MULTICOMP MJ15025 Bipolar (BJT) Single Transistor, PNP, 250V, 4MHz, 250W, -16A, 15 hFE3419 -
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Category: Bipolar transistorDescription: ON SEMICONDUCTOR MJ14002G Single transistor bipolar, universal, NPN, 80 V, 300 W, 1 mA, 100 hFE73541+$104.228010+$99.6963100+$98.8806250+$98.2462500+$97.24921000+$96.79602500+$96.16165000+$95.6178 -
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Category: Bipolar transistorDescription: Complementary Semiconductor Semiconductor Power Transitors35521+$64.302310+$61.5065100+$61.0033250+$60.6119500+$59.99681000+$59.71722500+$59.32585000+$58.9903 -
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Category: IGBTtransistorDescription: Infineon FF1000R17IE4BOSA1 NChannel IGBT module, serial, 1 kA, Vce=1700 V, 10 pin PrimePACK 3 package78461+$4446.332010+$4405.910825+$4385.700250+$4365.4896100+$4345.2790150+$4325.0684250+$4304.8578500+$4284.6472
